Crystal-Chemistry of Point Defects and Mechanisms Formation of Solid Solutions CdxZn1-xTe

Authors

  • G.Ya. Gurgula Vasyl Stefanyk Precarpathian National University
  • T.P. Vintonyak R&D Centre of Semiconductor Material Science ‘Vasyl Stefanyk’ Precarpathian National University
  • O.V. Yaremiychuk R&D Centre of Semiconductor Material Science ‘Vasyl Stefanyk’ Precarpathian National University

DOI:

https://doi.org/10.15330/pcss.16.4.706-710

Keywords:

solid solutions, point defects, crystalloquasichemical formulas

Abstract

A Crystal-formulas defined dominant point defects in solid solutions CdxZn1-x Te for n-and p-type conductivity output binary compounds ZnS and ZnTe. Dependence of the concentration of defects, free carriers and Hall concentration on the composition of the solid solutions.

References

A. I. Belogorohov, L. I. Belogorohova, A. G. Belov, V. M. Lakeenkov, N. A. Smirnova, Fizika i tehnika poluprovodnikov, 33(5), 549 (1999).

N. N. Berchenko, V. E. Krevs, V. G. Sredin. Poluprovodnikovyie tverdyie rastvoryi i ih primenenie. Spravochnyie tablitsyi (Voenizdat, Moskva, 1982).

J. Smith. A high temperature study of native defects in ZnTe, J. Phys. Chem. Solids. Pergamon Press, 32, 2201 (1971).

D. V. Korbutyak, S. V. Melnichuk, P. M. Tkachuk, UFZh, 44(6), 730 (1999).

A. Marbeuf, R .Druilhe, R. Tribolet, J. Cryst. Growt, 117(1), 10 (1992).

G. Ya. Pikus, Yu. V .Kalinichenko, N. I. Rudchenko, Neorganicheskie materialyi, 29(4), 752 (1992).

N. N. Berchenko, V. E. Krevs, V. G. Sredin, Poluprovodnikovyie tverdyie rastvoryi i ih primenenie (Moskva, 1982).

M. Aven, and J. S. Prener (eds.), Physics and Chemistry of II–VI Compounds (Amsterdam: North Holland 1967).

S. I. Radautsan, A. E. Tsurkan and O. G. Maksimova. Compound Semiconductors and its Properties (Kishinev, Shtiinitsa, 1971).

G. Mandel, Phys. Rev. A., 134, 1073 (1964).

G. Mandel, F. F. Morehead, P. R. Wagner, Phys. Rev. A. 136, 826 (1964).

N. V. Agrinskaya, E. N. Arkadeva, V. P. Karpenko, O. A. Matveev, A. I. Terentev, Fizika i tehnika poluprovodnikov, 18, 951 (1984).

O. A. Matveev, A. I. Terent’ev, V. P. Karpenko, N. K. Zelenina, A. Fauler, M. Fiederle, K. W. Benz, Phys. Status. Solidi B. 229, 1073 (2002).

M. R. Lorenz, B. Segall, Phys. Lett. 7, 18 (1963).

D. Nobel, Phil. Res. Repts. 14, 361 (1959).

M. R. Lorenz, B. Segall, H. H. Woodbury, Phys. Rev. A. 134, 751 (1964).

W. Stadler, D. M. Hofman, H. C. Alt, T. Muschik, B. K. Meyer, E. Weigel, G. Miller-Vogt, M. Salk, E. Rupp, K. W. Benz, Phys. Rev. B, 51(10), 619 (1995).

V. E. Sedov, O. A. Matveev, A. I. Terentev, N. K. Zelenina, fizika i tehnika poluprovodnikov 41(9), 1051 (2007).

E. F. Gross, G. M. Grigorovich, E. V. Pozdnyakov, V. G. Seredin, L. G. Suslina, Fizika i tehnika poluprovodnikov 12, 2913 (1970).

J. L. Reno, E. D. Jones, Phys. Rev. B, 45, 1440 (1992).

S. S. Lisnyak, Neorganicheskie materialyi, 32(2), 1913 (1992).

D. M. Freik, G. Ya. Gurgula, Visnik Prikarpatskogo natsIonalnogo unIversitetu. SerIya HImIya, 10, 33 (2010).

G. Ya. Gurgula, T. P. VIntonyak, N. D. Freik, Physics and Chemistry of Solid State 15(2), 763 (2014).

Published

2015-12-15

How to Cite

Gurgula, G., Vintonyak, T., & Yaremiychuk, O. (2015). Crystal-Chemistry of Point Defects and Mechanisms Formation of Solid Solutions CdxZn1-xTe. Physics and Chemistry of Solid State, 16(4), 706–710. https://doi.org/10.15330/pcss.16.4.706-710

Issue

Section

Scientific articles