Vol. 20 No. 3 (2019)

Scientific articles

• Hole States in Spherical Quantum Nanoheterosystem with Intermediate Spin-Orbital Interaction

  I.V. Bilynskyi, R.Ya. Leshko, H.O. Metsan, I.S. Shevchuk

  227-233

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• Optimal Conditions for the Deposition of Gold Nanofilms on a Silicon by Galvanic Replacement Method

  S.I. Nichkalo, M.V. Shepida, M.V. Chekaylo

  234-238

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• Formation of Nanoclusters on the Adsorbed Surface under the Action of Comprehensive Pressure and Electric Field

  R.M. Peleshchak, O.V. Kuzyk, O.O. Dan’kiv

  239-246

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• SiGe Epitaxial Films with Dislocations for the Switchable Memory: the Accurate First-Principle Calculations

  R.M. Balabai, D.V. Zalevskyi

  247-256

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• Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals

  V.M. Sklyarchuk, Z.I. Zakharuk, M.H. Kolisnyk, А.I. Rarenko, O.F. Sklyarchuk, P.M. Fochuk

  257-263

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• Optical Properties of Porous Silicon p-Si (100)

  P.O. Gentsar, M.V. Vuichyk, M.V. Isaev, P.O. Lischuk

  264-268

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• Modeling the Bimodal Behavior of Self-Repairing Optical Window Systems Prone to Brittle Failure

  O.L. Kapitanchuk, V.I. Teslenko

  269-274

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• Synthesis, Structural, Electrical Transport and Energetic Characteristics of ZrNi1-хVxSn Solid Solution

  L. Romaka, Yu. Stadnyk, V.A. Romaka, A. Нoryn, I. Romaniv, V. Krayovskyy, S. Dubelt

  275-281

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• Adsorption of Barium and Zinc Ions by Mesoporous TiO2 with Chemosorbed Carbonate Groups

  H. Vasylyeva, I. Mironyuk, I. Mykytyn, N. Danyliyk

  282-290

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• Vapor Permeability of Thin-Film Composite Materials Based |on Polyethylene

  N. Domantsevich, B. Yatsyshyn

  291-299

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• Effect of Transition Metals Oxide Additives on the Properties of Mixed-Alkali Glass for Electric Insulating Coatings on Aluminum

  V. Goleus, A. Salei

  300-305

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• Measurement of Thermoelectric Parameters of Thin-Film Semiconductor Materials Using the Harman Method

  Y. Tur, Y. Pavlovskyi, I. Virt

  306-310

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• Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications

  S.P. Novosiadly, T.H. Benko, I.T. Kogut

  311-317

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