Optical Properties of Porous Silicon p-Si (100)

Authors

  • P.O. Gentsar V.Ye. Lashkarev Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
  • M.V. Vuichyk V.Ye. Lashkarev Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
  • M.V. Isaev Taras Shevchenko National University of Kyiv
  • P.O. Lischuk Taras Shevchenko National University of Kyiv

DOI:

https://doi.org/10.15330/pcss.20.3.264-268

Keywords:

porous silicon p-Si (100)

Abstract

In this paper the reflectance spectra and transmission spectra of p-Si (100) porous silicon (PS) and silicon wires in the spectral range of 200 ÷ 1800 nm were investigated. Pore size of PS was 5 μm (lpor Si layer) and 50 μm (lpor Si layer) with porosity of 45 %, 55 % and 65 %. The length of silicon wires varies from 5.5 μm, to 50 μm with a porosity of 60 %. The decrease in the band gap of p-Si (100) porous silicon and silicon wires which grown on both sides of p-Si (100) as compared to the single crystal p-Si (100) is explained by the quantum-sized effect that occurs in the investigated objects.

References

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Published

2019-10-18

How to Cite

Gentsar, P., Vuichyk, M., Isaev, M., & Lischuk, P. (2019). Optical Properties of Porous Silicon p-Si (100). Physics and Chemistry of Solid State, 20(3), 264–268. https://doi.org/10.15330/pcss.20.3.264-268

Issue

Section

Scientific articles