Density of states and interband light absorption in Y2O3 and Sc2O3 thin films

  • O.M. Bordun Ivan Franko National University of Lviv
  • I.O. Bordun Ivan Franko National University of Lviv
  • I.M. Kofliuk Ivan Franko National University of Lviv
  • I.Yo. Kukharskyy Ivan Franko National University of Lviv
  • I.I. Medvid Ivan Franko National University of Lviv
Keywords: yttrium oxide, scandium oxide, thin film, fundamental absorption edge

Abstract

The long-wavelength edge of the fundamental absorption band of thin Y2O3 and Sc2O3 films obtained by the method of discrete evaporation in vacuum is investigated. On the basis of its temperature dependence, the excitons - phonon interaction is investigated, which made it possible to interpret the absorption edge as the absorption of self-trapped excitons. To analyze the experimental results, we used a model of a heavily doped or defective semiconductor in the quasi-classical approximation. The use of this model made it possible to estimate the radius of the ground electronic state a and the screening radius rS  and the concentration of free charge carriers N in the films under study.

 

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Published
2022-01-27
How to Cite
BordunO., BordunI., KofliukI., KukharskyyI., & MedvidI. (2022). Density of states and interband light absorption in Y2O3 and Sc2O3 thin films . Physics and Chemistry of Solid State, 23(1), 40-44. https://doi.org/10.15330/pcss.23.1.40-44
Section
Scientific articles (Physics)