Investigation of Electronic Structure of Zr1-xVxNiSn Semiconductive Solid Solution

Authors

  • Yu.V. Stadnyk Ivan Franko National University of Lviv
  • V.V. Romaka Institute for Solid State Research
  • V.A. Romaka National University "Lviv Polytechnic"
  • A.M. Нoryn Ivan Franko National University of Lviv
  • L.P. Romaka Ivan Franko National University of Lviv
  • V.Ya. Krayovskyy National University “Lvivska Politechnika”
  • І.М. Romaniv Ivan Franko National University of Lviv

DOI:

https://doi.org/10.15330/pcss.20.2.127-132

Keywords:

resistivity, thermopower coefficient, Fermi level

Abstract

The peculiarities of electronic and crystal structures of Zr1-xVxNiSn (x = 0 - 0.10) semiconductive solid solution were investigated. To predict Fermi level εF behavior, band gap εg and electrokinetic characteristics of Zr1-xVxNiSn, the distribution of density of electronic states (DOS) was calculated. The mechanism of simultaneous generation of structural defects of donor and acceptor nature was determined based on the results of calculations of electronic structure and measurement of electrical properties of Zr1-xVxNiSn semiconductive solid solution. It was established that in the band gap of Zr1-xVxNiSn the energy states of the impurity donor εD2 and acceptor εA1 levels (donor-acceptor pairs) appear, which determine the mechanisms of conduction of semiconductor.

References

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V.V. Romaka, P. Rogl, L. Romaka, Yu. Stadnyk, A. Grytsiv, O. Lakh, V. Krayovskii, Intermetallics 35, 45 (2013) (https://doi.org/10.1016/j.intermet.2012.11.022).

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Published

2019-07-10

How to Cite

Stadnyk, Y., Romaka, V., Romaka, V., Нoryn A., Romaka, . L., Krayovskyy, V., & Romaniv І. (2019). Investigation of Electronic Structure of Zr1-xVxNiSn Semiconductive Solid Solution . Physics and Chemistry of Solid State, 20(2), 127–132. https://doi.org/10.15330/pcss.20.2.127-132

Issue

Section

Scientific articles

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