Investigation of structural, energy state and kinetic characteristics of RNiSb semiconductor (R = Gd, Lu) Array

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L.P. Romaka
D. Kaczorowski
A.M. Нoryn
Yu.V. Stadnyk
V.Ya. Krayovskyy
V.V. Romaka

Abstract

Peculiarities of structural, energy and kinetic characteristics of p-GdNiSb and p-LuNiSb semiconductors in the temperature range T = 4.2 - 400 K. were investigated. ) to 6% vacancy and partial, to 1.35%, displacement of Ni (4c) atoms by Lu (5d16s2).

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How to Cite
Romaka, L., Kaczorowski, D., Нoryn A., Stadnyk, Y., Krayovskyy, V., & Romaka, V. (2016). Investigation of structural, energy state and kinetic characteristics of RNiSb semiconductor (R = Gd, Lu): Array. Physics and Chemistry of Solid State, 17(1), 37–42. https://doi.org/10.15330/pcss.17.1.37-42
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Scientific articles

References

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