Ways to improve the performance of GaAs-sex Schottky transistors (PTSH) and selective-doped heterotransistors (SLGT) for the formation of modern microwave circuits
DOI:
https://doi.org/10.15330/pcss.16.2.413-419Keywords:
selectively doped heterotransistor, FET Schottky, epitaxyAbstract
There is no doubt that the use of Schottky-based FET technology on GaAs to form high-speed LSIs has great potential. No less prospects are opened for the unique in their properties SLGT - technology for the design of modern LSI / VLSI.
In the case of SLGT, three main technological criteria can be satisfied: speed, low power consumption, and processability of the manufacturing process of complex LSI structures.
References
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[3] S. P. Novosjadlij, R. B. Atamanjuk, Fіzika і hіmіja tverdogo tіla 10(1), 205(2009).
[4] S. P. Novosjadlyj, V. M. Vivcharuk, Tehnologija i konstruirovanie v jelektronnoj apparature 3(81), 35 (2009).
[5] S. P. Novosjadlij, V. M. Vіvcharuk, S. M. Vertepnij, Vostochno-Evropejskij zhurnal peredovih tehnologij 1/7(37), 26(2009).
[6] S. P. Novosjadlij, V. M. Vіvcharuk, V. P. Peregіns'kij, Fіzika і hіmіja tverdogo tіla 10(4), 957 (2009).
[7] S. P. Novosjadlij, S. M. Marchuk, T. R. Sorohtej, Ju. V. Voznjak, Fіzika і hіmіja tverdogo tіla 13(2), 416(2012).
[8] S. P. Novosjadlij, T. P. Kіndrat, T. R. Sorohtej, Ju. V. Voznjak, Fіzika і hіmіja tverdogo tіla 13(3), 618 (2012).
[9] S. P. Novosjadlij, L. V. Mel'nik, T. P. Kіndrat, V. M. Varvaruk, Shіdno-Jevropejs'kij zhurnal novіtnіh tehnologіj 4/5(64), 1(2013).
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Published
2015-06-15
How to Cite
Novosyadlyy, S., & Lutsky, I. (2015). Ways to improve the performance of GaAs-sex Schottky transistors (PTSH) and selective-doped heterotransistors (SLGT) for the formation of modern microwave circuits. Physics and Chemistry of Solid State, 16(2), 413–419. https://doi.org/10.15330/pcss.16.2.413-419
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Scientific articles
