Crystal-Chemistry of Point Defects and Mechanisms Formation of Solid Solutions CdxZn1-xTe

Array

Authors

  • G.Ya. Gurgula Vasyl Stefanyk Precarpathian National University
  • T.P. Vintonyak R&D Centre of Semiconductor Material Science ‘Vasyl Stefanyk’ Precarpathian National University
  • O.V. Yaremiychuk R&D Centre of Semiconductor Material Science ‘Vasyl Stefanyk’ Precarpathian National University

DOI:

https://doi.org/10.15330/pcss.16.4.706-710

Keywords:

solid solutions, point defects, crystalloquasichemical formulas

Abstract

A Crystal-formulas defined dominant point defects in solid solutions CdxZn1-x Te for n-and p-type conductivity output binary compounds ZnS and ZnTe. Dependence of the concentration of defects, free carriers and Hall concentration on the composition of the solid solutions.

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Published

2015-12-15

How to Cite

Gurgula, G., Vintonyak, T., & Yaremiychuk, O. (2015). Crystal-Chemistry of Point Defects and Mechanisms Formation of Solid Solutions CdxZn1-xTe: Array. Physics and Chemistry of Solid State, 16(4), 706–710. https://doi.org/10.15330/pcss.16.4.706-710

Issue

Section

Scientific articles