Electrical Instability of CdTe:Si Crystals

  • Ye.S. Nykoniuk National University of Water Management and Nature Resources Use
  • O.E. Panchuk Yuriy Fedkovych Chernivtsi National University
  • S.V. Solodin Yuriy Fedkovych Chernivtsi National University
  • Z.I. Zakharuk Yuriy Fedkovych Chernivtsi National University
  • P.M. Fochuk Yuriy Fedkovych Chernivtsi National University
  • M.O. Kovalets National University of Water Management and Nature Resources Use
Keywords: cadmium telluride


Results of Hall effect measurements of cadmium telluride crystals, doped by silicon (dopant concentration in the melt was 1018 - 1019 cm-3), allowed to classify the studied samples and the conditions under which probably the definite crystal and impurity states are realized. We have found the distinction between 3 type of CdTe:Si crystals: (1) low-resistance p-type crystals with shallow acceptors, in which Si impurity is localized mainly in the large inclusions; (2) semi-insulating crystal with deep acceptors and submicron size dopant precipitates that are source/drain for interstitials Sii - shallow donors;  and (3) low-resistance crystals in which the n-type conductivity is provided by shallow donors: Sii (and/or SiCd). Therefore the silicon is responsible for n-type conductivity of doped samples, introducing as a donor Siі and provides semi-insulating state by forming deep acceptor complexes (SiCd-VCd2-)- with (Еv + 0.65 eV). Besides, the submicron silica precipitates, that have a tendto"dissolution" at relatively low temperatures, can act aselectricallyactive centers.


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How to Cite
NykoniukY., PanchukO., SolodinS., ZakharukZ., FochukP., & KovaletsM. (2017). Electrical Instability of CdTe:Si Crystals. Physics and Chemistry of Solid State, 18(1), 29-33. https://doi.org/10.15330/pcss.18.1.29-33
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