1.
Novosyadliy SP, Lukovkin VM, Melnyk R, Pavlyshyn AV. Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI. Phys. Chem. Solid St. [Internet]. 2020Jun.15 [cited 2021Jun.22];21(2):361-4. Available from: https://scijournals.pnu.edu.ua/index.php/pcss/article/view/3014