Levchenko I, Malanych G, Tomashyk V, Stratiychuk I. Influence of the C4H6O6 Concentration in the (NH4)2Cr2O7 HBr C4H6O6 Composition on the Chemical-Dynamic Polishing of the III-V Semiconductors. Phys. Chem. Sol. State [Internet]. 2016 Dec. 15 [cited 2024 May 3];17(4):604-10. Available from: https://scijournals.pnu.edu.ua/index.php/pcss/article/view/1236