NovosyadliyS. P., LukovkinV. M., MelnykR., and PavlyshynA. V. 2020. “Physical-Topology Modeling of silicon/Gallium Arsenide Schottky Transistor of Submicron Technology LSI”. Physics and Chemistry of Solid State 21 (2), 361-64. https://doi.org/10.15330/pcss.21.2.361-364.