Novosyadlyy, S.P., and A.M. Bosats’kyy. 2015. “Graded-Gap TechnologyFormattingof High-Speed GaAs – TransistorStructuresastheBasisforModern of Large Integrated Circuits”. Physics and Chemistry of Solid State 16 (1):221-29. https://doi.org/10.15330/pcss.16.1.221-229.