NOVOSYADLIY, S. P.; LUKOVKIN, V. M.; MELNYK, R.; PAVLYSHYN, A. V. Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI. Physics and Chemistry of Solid State, [S. l.], v. 21, n. 2, p. 361–364, 2020. DOI: 10.15330/pcss.21.2.361-364. Disponível em: https://scijournals.pnu.edu.ua/index.php/pcss/article/view/3014. Acesso em: 19 apr. 2024.