NOVOSYADLYY, S.P.; BOSATS’KYY , A.M. Graded-Gap TechnologyFormattingof High-Speed GaAs – TransistorStructuresastheBasisforModern of Large Integrated Circuits. Physics and Chemistry of Solid State, [S. l.], v. 16, n. 1, p. 221–229, 2015. DOI: 10.15330/pcss.16.1.221-229. Disponível em: https://scijournals.pnu.edu.ua/index.php/pcss/article/view/1736. Acesso em: 6 may. 2024.