LEVCHENKO, I.V.; MALANYCH, G.P.; TOMASHYK, V.M.; STRATIYCHUK, I.B. Influence of the C4H6O6 Concentration in the (NH4)2Cr2O7 HBr C4H6O6 Composition on the Chemical-Dynamic Polishing of the III-V Semiconductors. Physics and Chemistry of Solid State, [S. l.], v. 17, n. 4, p. 604–610, 2016. DOI: 10.15330/pcss.17.4.604-610. Disponível em: https://scijournals.pnu.edu.ua/index.php/pcss/article/view/1236. Acesso em: 3 may. 2024.