[1]
Novosyadlyy, S. and Lutsky, I. 2015. Ways to improve the performance of GaAs-sex Schottky transistors (PTSH) and selective-doped heterotransistors (SLGT) for the formation of modern microwave circuits. Physics and Chemistry of Solid State. 16, 2 (Jun. 2015), 413–419. DOI:https://doi.org/10.15330/pcss.16.2.413-419.