TY - JOUR AU - Stadnyk, Yu. AU - Romaka, V.A. AU - Romaka, L. AU - Demchenko, P. AU - Horyn, A. AU - Poplavskyi, O. AU - Pashkevych, V. AU - Haraniuk, P. PY - 2023/03/10 Y2 - 2024/03/28 TI - Peculiarities of structural, electrokinetic, energetic, and magnetic properties semiconductive solid solution Lu1-xVxNiSb: Array JF - Physics and Chemistry of Solid State JA - Phys. Chem. Sol. State VL - 24 IS - 1 SE - Scientific articles (Physics) DO - 10.15330/pcss.24.1.84-91 UR - https://scijournals.pnu.edu.ua/index.php/pcss/article/view/6207 SP - 84-91 AB - <p>The structural, electrokinetic, energetic, and magnetic properties of the new semiconductive solid solution Lu<sub>1-</sub><em><sub>x</sub></em>V<em><sub>x</sub></em>NiSb<em>,</em> <em>х</em>=0–0.10, were studied. It was shown that V atoms could simultaneously occupy different crystallographic positions in different ratios, generating structural defects of acceptor and donor nature. This creates corresponding acceptor and donor bands in the bandgap <em>ε</em><sub>g</sub> of Lu<sub>1-</sub><em><sub>x</sub></em>V<em><sub>x</sub></em>NiSb. The mechanism of the formation of two acceptor bands with different depths of occurrence has been established: a small acceptor band <em>ε</em><sub>А</sub><sup>2</sup>, formed by defects due to the substitution of Ni atoms by V ones in the 4<em>c</em> position, and band <em>ε</em><sub>А</sub><sup>1</sup>, generated by vacancies in the LuNiSb structure. The ratio of the concentrations of generated defects determines the position of the Fermi level <em>ε</em><sub>F</sub> and the conduction mechanisms. The investigated solid solution Lu<sub>1-</sub><em><sub>x</sub></em>V<em><sub>x</sub></em>NiSb is a promising thermoelectric material.</p> ER -