Structural and morphological properties of CdSe1-xSx thin films obtained by the method of high-frequency magnetron sputtering

A.I. Kashuba; I.V. Semkiv; B. Andriyevsky; H.A. Ilchuk; N.T. Pokladok

doi:10.15330/pcss.25.1.40-44

Authors

A.I. Kashuba Lviv Polytechnic National University, Lviv, Ukraine
I.V. Semkiv Lviv Polytechnic National University, Lviv, Ukraine
B. Andriyevsky Koszalin University of Technology, Koszalin, Poland
H.A. Ilchuk Lviv Polytechnic National University, Lviv, Ukraine
N.T. Pokladok Lviv Polytechnic National University, Lviv, Ukraine

DOI:

https://doi.org/10.15330/pcss.25.1.40-44

Keywords:

thin film, solid-state solution, crystal structure, X-ray fluorescence spectroscopy, X-ray diffraction, crystallite size, texture coefficient

Abstract

CdSe_1-xS_x (x= 0.3, 0.4 and 0.6) thin films were deposited on quartz and silicon substrates by the method of high-frequency magnetron sputtering. The chemical composition analysis and crystal structure refinement was examined with using X-ray fluorescence spectroscopy and X-ray diffraction data. CdSe_1-xS_x thin films crystallizes in hexagonal structure (structure type – ZnO, space group P6₃mc (No. 186)). The lattice parameters (a, c and V), crystallite size (D), strain (ε), dislocation density (δ) and the texture coefficient T_C(hkl) was estimated from X-ray diffraction analysis. Units-cell parameters decrease with increasing S content in CdSe_1-xS_x thin film.

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