The Phase Еquilibrium in the HgS–Ga2S3–Bi(Sb)2S3 Systems

O.V.  Smitiukh; I.I. Petrus’

doi:10.15330/pcss.24.3.467-476

Authors

O.V. Smitiukh Lesya Ukrainka Volyn National University, Lutsk, Ukraine
I.I. Petrus’ Lesya Ukrainka Volyn National University, Lutsk, Ukraine

DOI:

https://doi.org/10.15330/pcss.24.3.467-476

Keywords:

phase diagram, solidus, quasi-binary system, liquidus surface projection

Abstract

Phase equilibria in the quasi-ternary systems HgS–Ga₂S₃–Bi(Sb)₂S₃ were studied by physico-chemical analysis methods on 177 alloys that were synthesized by direct single-temperature method. Phase diagrams of the quasi-binary systems HgS–Bi₂S₃ and Ga₂S₃–Bi₂S₃, six vertical sections (HgGa₂S₄–HgBi₂S₄, HgGa₂S₄–Bi₂S₃, HgGa₆S₁₀–Bi₂S₃, HgGa₆S₁₀–HgBi₂S₄, HgGa₂S₄–Sb₂S₃, and HgS–“GaSbS₃”), and liquidus surface projections were investigated. Due to large primary crystallization region of mercury thiogallate, particularly at the HgGa₂S₄–Bi₂S₃ and HgGa₂S₄–HgBi₂S₄ sections, and low temperature (950-1050 K), the growth of single crystals of mercury thiogallate is possible using solution-melt method.

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