Low-temperature deposition of Cd1-xZnxTe layers by laser sputtering and their physical properties

  • Yu.S. Gromovyi V.E. Lashkarev Institute of Semiconductor Physics NAS of Ukraine
  • L.V. Rashkovetskyi V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine
  • S.V. Plyatsko V.E. Lashkarev Institute of Semiconductor Physics NAS of Ukraine
Keywords: passivating coatings, cadmium telluride, thin films, laser epitaxy, low temperature photoluminescence

Abstract

CdZnTe films were grown by the method of modulated infrared laser deposition at a substrate temperature Tsub ≤ 1200C from appropriate sources on oriented single-crystal substrates Si, GaAs, InSb in the same technological conditions in one technological cycle. Surface morphology and spectra of low-temperature photoluminescence (T = 4.2K) in the energy range from 1.30 to 1.70 eV were studied. Luminescence spectra were analyzed and presented from three different energy regions: from 1.70 eV to 1.60 eV with exciton emission, from 1.60 eV to 1.55 eV by donor-acceptor transitions (DAP) and region A-centers from 1, 55 to 1.40 eV. The presence in the low-temperature photoluminescence spectra of free exciton bands, excitons on the neutral acceptor and neutral donor, and their phonon replicas on CdZnTe/InSb films testifies to the high structural perfection inherent in materials of detector quality with composition corresponding of the CdZnTe-target.

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Published
2022-03-22
How to Cite
GromovyiY., RashkovetskyiL., & PlyatskoS. (2022). Low-temperature deposition of Cd1-xZnxTe layers by laser sputtering and their physical properties. Physics and Chemistry of Solid State, 23(1), 154-158. https://doi.org/10.15330/pcss.23.1.154-158
Section
Scientific articles (Physics)