Temperature dependence of the optical absorption edge of doped gallium arsenide

  • Ig. Iv. Chychura National University of Uzhhorod
  • I. I. Turianytsia National University of Uzhhorod
  • Iv. Iv. Chychura Institute of Electron Physics, Ukranian National Academy of Sciences
Keywords: Fiber-optic temperature sensors, Zn doped GaAs crystals, Optical transmission of doped GaAs crystals

Abstract

The temperature dependences of the optical absorption edges of Zn doped GaAs semiconductor crystals have been measured from 300 to 560 K. The temperature dependence of the optical absorption in the Urbach edges is adequately reproduced by a Bose-Einstein model. Analysis of experimental results gave us the opportunity to offer an explicit function of two arguments (photon energy and temperature) for the absorption coefficient of doped crystals in the Urbach edge region.

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Published
2020-06-15
How to Cite
Chychura, I. I., Turianytsia, I. I., & Chychura, I. I. (2020). Temperature dependence of the optical absorption edge of doped gallium arsenide. Physics and Chemistry of Solid State, 21(2), 288-293. https://doi.org/10.15330/pcss.21.2.288-293
Section
Scientific articles