Electron-beam recording of surface structures on As-S-Se chalcogenide thin films

  • L. Revutska National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute
  • O. Shylenko Safarik University
  • A. Stronski V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
  • V. Komanicky Safarik University
  • V. Bilanych Uzhhorod National University
Keywords: chalcogenide thin films, electron beam irradiation, surface nanostructures


The effect of electron beam irradiation on the amorphous chalcogenide film As38S36Se26 was studied. The formation of cones with a Gaussian profile on the surfaces of the films was found after local electron irradiation. Exposition dependent evolution of height surface nanostructures has been detected. The dependence of the height of surface nanostructures on the dose of irradiation is analyzed. Charge accumulation model into interaction region between the film and the electron beam was used to explain the electron-induced phenomena of the surface structure of amorphous As38S36Se26 films. Charges relaxation times, and electron beam penetration depth into film, and the initial and inverse doses are determined.


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How to Cite
RevutskaL., ShylenkoO., StronskiA., KomanickyV., & BilanychV. (2020). Electron-beam recording of surface structures on As-S-Se chalcogenide thin films. Physics and Chemistry of Solid State, 21(1), 146-150. https://doi.org/10.15330/pcss.21.1.146-150
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