Investigation of Ti1-xMoxCoSb Semiconducting Solid Solution


  • Yu. Stadnyk Ivan Franko National University of Lviv
  • V. Romaka National University “Lvivska Politechnika”
  • A. Нoryn Ivan Franko National University of Lviv
  • L. Romaka Ivan Franko National University of Lviv
  • V. Krayovskyy National University “Lvivska Politechnika”
  • I. Romaniv Ivan Franko National University of Lviv
  • M. Rokomanuk National University “Lvivska Politechnika”



solid solution, electrical conductivity, thermopower coefficient, Fermi level


The effect of doping of the TiCoSb compound (MgAgAs structure type) by Mo atoms on the features of the structural characteristics and behavior of the electrokinetic, energetic and magnetic properties of the Ti1-xMoxCoSb semiconducting solid solution (х = 0 - 0.06) in the temperature interval 80 - 400 K was studied. It was shown that including of Mo atoms (rМо= 0.140 nm) in the ToCoSb structure by substitution of Ti atoms (rТі= 0.146 нм) in 4a position is accompanied with non-monotonous variation of the lattice parameter values а(х), indicating unpredictable structural changes. Based on analysis of the variation of the electric resistivity values, thermopower coefficient, magnetic susceptibility and energetic characteristics, it was concluded that simultaneous generation in the crystal of the structural defects of the donor and acceptor nature (donor-acceptor pairs), which generate corresponding energy levels in the band gap of semiconductor and determine its electrical conductivity.


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How to Cite

Stadnyk, Y., Romaka, V., Нoryn A., Romaka, L., Krayovskyy, V., Romaniv, I., & Rokomanuk, M. (2020). Investigation of Ti1-xMoxCoSb Semiconducting Solid Solution. Physics and Chemistry of Solid State, 21(1), 73–81.



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