Selective Etching of ZnхCd1-хTe Single Crystals

Authors

  • G.M. Okrepka V.Ye. Laskaryov Institute for Semiconductor Physics of National Academy of Sciences of Ukraine
  • V.М. Tomashik V.Ye. Laskaryov Institute for Semiconductor Physics of National Academy of Sciences of Ukraine,

DOI:

https://doi.org/10.15330/pcss.16.4.711-715

Keywords:

chemical etching, solid solutions, selective etching, etchant, etch pits

Abstract

Selective etching is an express method to identify the defects of crystal structure of semiconductors. It reveals the dislocations density, type of conductivity, crystal’s orientation, inclusions/precipitates, twins. This article is the review of selective etching of ZnxCd1-xTe single crysrals. All informations has been generalized in the table. Qualitative and quantitative compositions of etchants and information about defect structure of
ZnxCd1-xTe after etchant treatment have been represented in the table.

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Published

2015-12-15

How to Cite

Okrepka, G., & Tomashik, V. (2015). Selective Etching of ZnхCd1-хTe Single Crystals. Physics and Chemistry of Solid State, 16(4), 711–715. https://doi.org/10.15330/pcss.16.4.711-715

Issue

Section

Scientific articles