Chemical Treatment of CdTe and Solid Solution ZnxCd1-xTe and Cd0,2Hg0,8Te and Aqueous Solutions of HNO3–НІ-Lactate Acid

E.E. Hvozdiyevskyy; Z.F. Tomashik; V.M. Tomashyk; R.O. Denysyuk

doi:10.15330/pcss.17.2.247-250

Authors

E.E. Hvozdiyevskyy Zhytomyrskyy State University named after Ivan Franko
Z.F. Tomashik Instytut Semiconductor Physics. VE Lashkarev NAS of Ukraine
V.M. Tomashyk Instytut Semiconductor Physics. VE Lashkarev NAS of Ukraine
R.O. Denysyuk Zhytomyrskyy State University named after Ivan Franko

DOI:

https://doi.org/10.15330/pcss.17.2.247-250

Keywords:

semiconductor solid solutions, single crystal, herbalist, surface, chemical etching, polishing

Abstract

The method of disk rotating kinetics of dissolution processes CdTe, ZnxCd1-xTe and Cd0,2Hg0,8Te in yodvydilyayuchyh etching compositions HNO3-NO-lactate acid. The dependence of etching rate of said material concentration oxidizer and organic solvent. Optimized polishing compositions herbalists and modes chemical dynamic polishing of semiconductor materials studied. The influence of Zn and Hg content in the composition of solid solutions on the quality of the resulting surface etching mixtures.

References

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